Transient enhancement of magnetization damping in CoFeB film via pulsed laser excitation

Transient enhancement of magnetization damping in CoFeB film via pulsed laser excitation

Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy

A 3.5 nm amorphous CoFeB film was sputtered on GaAs (001) wafer substrate without applying magnetic field during deposition, and a significant in-plane uniaxial magnetic anisotropy (UMA) field (Hu) of about 300 Oe could be achieved. To precisely determine the intrinsic Gilbert damping constant (α) of this film, both ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TR...

Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe2O4 films

Copper ferrite films have been deposited on s100d MgO substrates by pulsed-laser deposition. The oxygen pressure used in deposition was varied from 1 to 120 mTorr with the substrate temperature fixed at 700 °C. Magnetization values are measured to increase with oxygen pressure, reaching a maximum value of 2480 G, which is a 42% increase over the bulk equilibrium value. Extended x-ray absorption...

Excitation and damping of a self-modulated laser wakefield

Spatially, temporally, and angularly resolved collinear collective Thomson scattering was used to diagnose the excitation and damping of a relativistic-phase-velocity self-modulated laser wakefield. The excitation of the electron plasma wave was observed to be driven by Raman-type instabilities. The damping is believed to originate from both electron beam loading and modulational instability. T...

Voltage-induced magnetization dynamics in CoFeB/MgO/CoFeB magnetic tunnel junctions

Recent progress in magnetic tunnel junctions (MTJs) with a perpendicular easy axis consisting of CoFeB and MgO stacking structures has shown that magnetization dynamics are induced due to voltage-controlled magnetic anisotropy (VCMA), which will potentially lead to future low-power-consumption information technology. For manipulating magnetizations in MTJs by applying voltage, it is necessary t...